Study and simulation of electronic transport in CMOS and beyond CMOS electronic devices
Development of semi-classic transport methods (monte carlo, single particle, ensemble, multi subband) including quantic effects. Some designs and alternatives to point out are: use of silicon on insulator (SOI) substrates that allow the implementation of multiple gate devices (MuGFETs); strained silicon (SSi) channels that improve the transport of load carriers; the use of alternative materials for the channels such as Ge and its on insulator version (GeOI), or III-V binary compounds (e.g. GaAs) for very high frequency applications.